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AM29PDS322DB45WMIN データシート(PDF) 40 Page - Advanced Micro Devices

部品番号 AM29PDS322DB45WMIN
部品情報  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
PDF  51 Pages
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDS322DB45WMIN データシート(HTML) 40 Page - Advanced Micro Devices

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38
Am29PDS322D
23569A5 December 4, 2006
D A TA
SH EE T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Option
JEDEC
Std
Description
10
12
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
60
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
60
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
Chip Enable High during toggle bit polling
Min
20
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
60
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
60
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
11
µs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (Note 2)
Typ
5
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns



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