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M41000000G データシート(PDF) 56 Page - Advanced Micro Devices |
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M41000000G データシート(HTML) 56 Page - Advanced Micro Devices |
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56 / 63 page ![]() August 19, 2002 Am41DL6408G 55 P R E L I M INARY AC CHARACTERISTICS Figure 29. SRAM Read Cycle Notes: 1. WE# = VIH, if CIOs is low, ignore UB#s/LB#s timing. 2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. Data Valid High-Z tRC CE#1s Address OE# Data Out tOH tAA tCO1 tOE tOLZ tBLZ tLZ tOHZ tHZ CE2s tCO2 |
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