DMN2004K datasheet(1/4 Pages) DIODES

部品番号	DMN2004K

部品情報	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

メーカー	DIODES [Diodes Incorporated]

ホームページ	http://www.diodes.com

Logo

1 / 4 page

Lead-free Green

DS30938 Rev. 2 - 2

1 of 4

DMN2004K

www.diodes.com

ã Diodes Incorporated

DMN2004K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Note 1)

Steady

State

TA = 25

°C

TA = 85

°C

ID

540

390

mA

Pulsed Drain Current (Note 3)

IDM

1.5

A

Total Power Dissipation (Note 1)

Pd

350

mW

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Operating and Storage Temperature Range

Tj,TSTG

-65 to +150

°C

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width

£10mS, Duty Cycle £1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

Mechanical Data

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

D

G

S

Source

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Gate

Drain

·

Case: SOT-23

·

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish

¾ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

·

Terminal Connections: See Diagram

·

Marking: See Last Page

·

Ordering & Date Code Information: See Last Page

·

Weight: 0.008 grams (approximate)

·

Low On-Resistance: RDS(ON)

·

Low Gate Threshold Voltage

·

Low Input Capacitance

·

Fast Switching Speed

·

Low Input/Output Leakage

·

Lead Free By Design/RoHS Compliant (Note 2)

·

ESD Protected up to 2KV

·

"Green" Device (Note 4)

·

Qualified to AEC-Q101 standards for High Reliability

Features

Maximum Ratings

@ TA = 25°C unless otherwise specified

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

ESD protected up to 2KV

SPICE MODEL: DMN2004K

同様の部品番号 - DMN2004K

メーカー	部品番号	データシート	部品情報
Diodes Incorporated	DMN2004K	194Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30938 Rev. 5 - 2
	DMN2004K-7	194Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30938 Rev. 5 - 2
	DMN2004K	194Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30938 Rev. 5 - 2
	DMN2004K	153Kb / 6P	N-CHANNEL ENHANCEMENT MODE MOSFET Rev 9

More results

同様の説明 - DMN2004K

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor