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ES3JB データシート(PDF) 1 Page - UN Semiconducctor INC |
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ES3JB データシート(HTML) 1 Page - UN Semiconducctor INC |
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1 / 4 page ![]() ES3AB~ES3JB ROHS Revision March 1,2022 www.unsemi.com.tw www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 1/3 Surface Mount Superfast Recovery Rectifier Features Mechanical Data For surface mounted applications Low profile package Glass passivated chip junction Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU directives Case: SMB Quantity Per Reel : 3,000pcs Approx. Weight : 0.095g / 0.003oz Terminals: Solderable per MIL-STD-750, Method 2026 1:Cathode 2:Anode Parameter Symbol ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB Units VRRM VRMS VDC VF IR IR Cj trr R θJA R θJC TJ,Tstg V V V V pF nS ℃ Ta=25℃ Ta=125℃ Note: (1) Measured with IF=0.5A, IR=1A, Irr=0.25A. (2) P.C.B. mounted with 2.0" X 2.0" (5 X 5cm) copper pad areas. Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Forward Voltage at at 3A Typical Junction Capacitance at VR=4V, f=1MHz Maximum Reverse Recovery Time Operating and Storage Temperature Range 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load Maximum DC Reverse Current at Rated DC Reverse Voltage ( 1) ( 2) IFSM A 90 1.0 1.25 1.68 5.0 100 35 50 16 -55 ~ +150 45 μA Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. SMB Maximum Average Forward Rectified Current at Tc =100℃ IF(AV) 3.0 A 2 1 Typical Thermal Resistance ℃/ W |
同様の部品番号 - ES3JB |
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同様の説明 - ES3JB |
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