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AM29SL400CT100RWAF データシート(PDF) 40 Page - Advanced Micro Devices

部品番号 AM29SL400CT100RWAF
部品情報  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  44 Pages
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL400CT100RWAF データシート(HTML) 40 Page - Advanced Micro Devices

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Am29SL400C
Am29SL400C_00_A6 January 23, 2007
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1.
Typical program and erase times assume the following conditions: 25
°C, 2.0 V V
CC, 1,000,000 cycles. Additionally, programming typicals assume
checkerboard pattern.
2.
Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.
3.
The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than
the maximum program times listed.
4.
In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 on page 18
for further information on command definitions.
6.
The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
2
15
s
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
38
s
Byte Programming Time
10
300
µs
Excludes system level overhead
(Note 5)
Word Programming Time
12
360
µs
Chip Programming Time
(Note 3)
Byte Mode
5
40
s
Word Mode
3.5
30
s



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