October 2006 - Rev 13-Oct-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Mimix Broadband

’s 11.0-17.0 GHz GaAs MMIC receiver has a noise

figure of 2.2 dB and 20.0 dB image rejection across the band. This

device is a three stage LNA followed by an image reject resistive

pHEMT mixer and includes an integrated LO buffer amplifer. The image

reject mixer eliminates the need for a bandpass filter after the LNA to

remove thermal noise at the image frequency. I and Q mixer outputs

are provided and an external 90 degree hybrid is required to select the

desired sideband. This MMIC uses Mimix Broadband

’s 0.15 µm GaAs

PHEMT device model technology, and is based upon electron beam

lithography to ensure high repeatability and uniformity. The chip has

surface passivation to protect and provide a rugged part with backside

via holes and gold metallization to allow either a conductive epoxy or

eutectic solder die attach process. This device is well suited for

Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT

applications.

11.0-17.0 GHz GaAs MMIC

Receiver

Page 1 of 8

Fully Integrated Design

2.2 dB Noise Figure

13.5 dB Conversion Gain

20 dB Image Rejection

+4 dBm IIP3

+3 dBm LO drive Level

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883 Method 2010

Features

General Description

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1), (Id3)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+6.0 VDC

250, 200 mA

+0.3 VDC

+17 dBm

-55 to MTTF Table

MTTF Table

Chip Device Layout

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

3

Units

GHz

GHz

GHz

dB

dB

dBm

dBc

dB

dB

dBm

VDC

VDC

VDC

VDC

VDC

mA

mA

Min.

11.0

9.0

DC

-

10.0

-

15.0

-

-

-

-

-

-1.2

-1.2

-1.2

-

-

Typ.

-

-

2.0

15.0

13.5

+3.0

20.0

2.2

40.0/40.0

+4.0

+4.0

+4.0

-0.3

-0.1

-0.5

80

100

Max.

17.0

19.0

TBD

-

-

-

-

3.0

-

-

+5.0

+5.0

+0.1

+0.1

+0.1

120

150

Parameter

Frequency Range (RF)

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Isolation LO/RF

Input Third Order Intercept (IIP3)

Drain Bias Voltage (Vd1)

Drain Bias Voltage (Vd3)

Gate Bias Voltage (Vg1,2)

Gate Bias Voltage (Vg3)

Gate Bias Voltage (Vg4) Mixer, Doubler

Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)

Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)

(1) Measured using constant current.

(2) Guaranteed specifications from 12 to 15 GHz.

1

R1007