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PBYR2100CT データシート(PDF) 2 Page - NXP Semiconductors |
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PBYR2100CT データシート(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 May 25 2 Philips Semiconductors Product specification Schottky barrier double diode PBYR2100CT FEATURES • Low switching losses • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Schottky barrier double diode fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. PINNING PIN DESCRIPTION 1 anode (a1) 2 common cathode 3 anode (a2) 4 common cathode 4 123 Top view MAM086 4 1 3 2 Fig.1 Simplified outline (SOT223), pin configuration and symbol. Marking code: BYR210. |
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