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PBYR2545CTX データシート(PDF) 1 Page - NXP Semiconductors |
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PBYR2545CTX データシート(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2545CTF, PBYR2545CTX Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 40 V/ 45 V • Reverse surge capability • High thermal cycling performance I O(AV) = 20 A • Isolated mounting tab V F ≤ 0.65V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2545CTF is supplied in the SOT186 package. The PBYR2545CTX is supplied in the SOT186A package. PINNING SOT186 SOT186A PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR25 40CTF 45CTF PBYR25 40CTX 45CTX V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T hs ≤ 86 ˚C - 40 45 V I O(AV) Average rectified output square wave; δ = 0.5; - 20 A current (both diodes T hs ≤ 98 ˚C conducting) I FRM Repetitive peak forward square wave; δ = 0.5; - 20 A current per diode T hs ≤ 98 ˚C I FSM Non-repetitive peak forward t = 10 ms - 135 A current per diode t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a1 a2 13 2 12 3 case 12 3 case October 1998 1 Rev 1.300 |
同様の部品番号 - PBYR2545CTX |
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同様の説明 - PBYR2545CTX |
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