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PBYR740B データシート(PDF) 1 Page - NXP Semiconductors |
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PBYR740B データシート(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR745B, PBYR745D series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 40 V/ 45 V • Reverse surge capability • High thermal cycling performance I F(AV) = 7.5 A • Low thermal resistance V F ≤ 0.57 V GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR745B series is supplied in the SOT404 surface mounting package. The PBYR745D series is supplied in the SOT428 surface mounting package. PINNING SOT404 SOT428 PIN DESCRIPTION 1 no connection 2 cathode 1 3 anode tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR7 40B 45B PBYR7 40D 45D V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T mb ≤ 114 ˚C - 40 45 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 136 ˚C - 7.5 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 136 ˚C - 15 A current I FSM Non-repetitive peak forward t = 10 ms PBYR7..B - 135 A current t = 8.3 ms - 150 A t = 10 ms PBYR7..D - 100 A t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package. k a tab 3 1 2 3 tab 13 tab 2 July 1998 1 Rev 1.200 |
同様の部品番号 - PBYR740B |
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同様の説明 - PBYR740B |
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