isc N-Channel MOSFET Transistor

FS70VS-2

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID=1mA

100

--

--

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 1mA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=35A

--

14

20

mΩ

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0

--

--

±

0.1

uA

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS= 0

--

--

0.1

mA

VSD

Forward On-Voltage

IS=35A; VGS= 0

--

1.0

1.5

V

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