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ZLLS2000 データシート(PDF) 4 Page - Zetex Semiconductors

部品番号 ZLLS2000
部品情報  40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
PDF  7 Pages
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メーカー  ZETEX [Zetex Semiconductors]
ホームページ  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZLLS2000 データシート(HTML) 4 Page - Zetex Semiconductors

  ZLLS2000 Datasheet HTML 1Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 2Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 3Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 4Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 5Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 6Page - Zetex Semiconductors ZLLS2000 Datasheet HTML 7Page - Zetex Semiconductors  
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Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring
higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will
benefit from using Zetex low VF ZHCS series diodes.
ZLLS2000
SEMICO NDUC TORS
ISSUE 4 - APRIL 2007
4
SCHOTTKY DIODE CHARACTERISTICS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Reverse breakdown voltage
V
(BR)R
40
V
I
R=1mA
Forward voltage
V
F
260
290
322
345
395
440
475
550
465
-
-
-
370
430
490
540
640
mV
mV
mV
mV
mV
mV
mV
mV
I
F=50 mA*
I
F=100 mA*
I
F=250mA*
I
F=500mA*
I
F=1000mA*
I
F=1500mA*
I
F=2000mA*
I
F=3000mA*
I
F=2000mA*,Ta = 100 C
Reverse current
I
R
25
1.7
40
A
mA
V
R=30V
V
R=30V, Ta=85 C
Diode capacitance
C
D
65
pF
f=1MHz,V
R=30V
Reverse recovery time
Reverse recovery charge
t
rr
Q
rr
6
685
ns
pC
Switched from
I
F = 500mA
to V
R =5.5V
Measured @ I
R 50mA.
di / d t > 500mA / ns.
Rsource = 6 ;Rload= 10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
2%



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