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PDTA124EU データシート(PDF) 4 Page - NXP Semiconductors

部品番号 PDTA124EU
部品情報  PNP resistor-equipped transistor
PDF  8 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTA124EU データシート(HTML) 4 Page - NXP Semiconductors

  PDTA124EU Datasheet HTML 1Page - NXP Semiconductors PDTA124EU Datasheet HTML 2Page - NXP Semiconductors PDTA124EU Datasheet HTML 3Page - NXP Semiconductors PDTA124EU Datasheet HTML 4Page - NXP Semiconductors PDTA124EU Datasheet HTML 5Page - NXP Semiconductors PDTA124EU Datasheet HTML 6Page - NXP Semiconductors PDTA124EU Datasheet HTML 7Page - NXP Semiconductors PDTA124EU Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 13
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
PDTA124EU
Fig.3
DC current gain as a function of collector
current; typical values.
VCE = −5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −40 °C.
handbook, halfpage
MBK790
(1)
(3)
−10−1
−1
−10
−102
IC (mA)
hFE
103
10
102
1
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = −40 °C.
handbook, halfpage
−1
−10−1
−10−2
MBK789
−10−1
−1
−10
−102
IC (mA)
VCEsat
(V)
(2)
(3)
(1)
Fig.5
Input-off voltage as a function of collector
current; typical values.
VCE = −5V.
(1) Tamb = −40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
−10
−1
−10−1
MBK792
−10−2
−10−1
−1
−10
IC (mA)
Vi(off)
(V)
(2)
(3)
(1)
Fig.6
Input-on voltage as a function of collector
current; typical values.
VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
−102
−1
−10
−10−1
MBK791
−10−1
−1
−10
−102
IC (mA)
Vi(on)
(V)
(2)
(3)
(1)



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