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PDTC114TS データシート(PDF) 2 Page - NXP Semiconductors

部品番号 PDTC114TS
部品情報  NPN resistor-equipped transistor
PDF  8 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTC114TS データシート(HTML) 2 Page - NXP Semiconductors

  PDTC114TS Datasheet HTML 1Page - NXP Semiconductors PDTC114TS Datasheet HTML 2Page - NXP Semiconductors PDTC114TS Datasheet HTML 3Page - NXP Semiconductors PDTC114TS Datasheet HTML 4Page - NXP Semiconductors PDTC114TS Datasheet HTML 5Page - NXP Semiconductors PDTC114TS Datasheet HTML 6Page - NXP Semiconductors PDTC114TS Datasheet HTML 7Page - NXP Semiconductors PDTC114TS Datasheet HTML 8Page - NXP Semiconductors  
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1998 May 18
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC114TS
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
NPN resistor-equipped transistor in a
TO-92; SOT54 plastic package.
PNP complement: PDTA114TS.
PINNING
PIN
DESCRIPTION
1
base/input
2
collector/output
3
emitter/ground
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
handbook, halfpage
MAM361
1
2
3
2
3
1
R1
Fig.2
Equivalent inverter
symbol.
MGL136
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
−−
50
V
IO
output current (DC)
−−
100
mA
ICM
peak collector current
−−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−−
500
mW
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
−−
R1
input resistor
7
10
13
k
Ω



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