2001 Nov 07

2

Philips Semiconductors

Product specification

NPN/PNP resistor-equipped transistors

PEMD12

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN/PNP resistor-equipped transistor in a SOT666 plastic

package.

MARKING

TYPE NUMBER

MARKING CODE

PEMD12

D2

PINNING

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

handbook, halfpage

MAM448

12

3

4

6

5

Top view

65

4

12

3

R2

TR1

TR2

R1

R1

R2

Fig.1 Simplified outline (SOT666) and symbol.

MBK120

2, 5

6, 3

1, 4

Fig.2 Equivalent inverter symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

collector-emitter voltage

50

V

peak collector current

100

mA

R1

bias resistor

47

k

Ω

R2

bias resistor

47

k

Ω