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PEMD13 データシート(PDF) 6 Page - NXP Semiconductors |
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PEMD13 データシート(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 2001 Sep 11 6 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2=47kΩ PEMD13 handbook, halfpage 103 10 102 1 MGW403 −10−1 −1 −10 IC (mA) hFE −102 (1) (2) (3) Fig.7 DC current gain as a function of collector current; typical values. TR2 (PNP); VCE = −5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage −1 −10−2 −10−1 MGW404 −10−1 −1 −10 IC (mA) VCEsat (V) −102 (1) (2) (3) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage −10 −10−1 −1 MGW405 −10−2 −10−1 −1 IC (mA) −10 Vi(off) (V) (1) (2) (3) Fig.9 Input-off voltage as a function of collector current; typical values. TR2 (PNP); VCE = −5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage −102 −1 −10 −10−1 MGW406 −10−1 −1 −10 IC (mA) −102 Vi(on) (V) (1) (2) (3) Fig.10 Input-on voltage as a function of collector current; typical values. TR2 (PNP); VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. |
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