SCS1065B

650V/10A SiC Schottky Barrier Diode

TO-263

1

2

3

Low Forward Voltage (VF)

Shorter recovery time

High speed switching

High surge current capability

Enabling higher frequency and increased power density

System efficiency improvement

System cost and size savings due to the reduced cooling requirements

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Features

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Halogen Free, RoHS Compliant

Applications

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Power Factor Correction in SMPS

Solar inverter

Uninterruptible Power Supply

Data Center

Circuit Diagram

3

1

2

1: Cathode

2: Anode

3: Cathode

Motor Drives

Absolute Maximum Rating

Symbol

Parameter

Value

Unit

Test Condition

VRM

Repetitive peak reverse voltage

650

V TC = 25°C

IF

Continuous forward current

10

A TC = 135°C

IFSM

Surge non-repetitive forward current

90

A TC = 25°C, tp=10ms, Sine half wave

Tj

Junction temperature

175

°

C

TSTG

Storage temperature

-55/+175 °C

PD

Total power dissipation

75

W TC = 25°C