PJS6601

January 20,2022

PJS6601-REV.02

Page 2

N-Channel Electrical Characteristics (TA=25

o

C unless otherwise noted)

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

4.

The maximum current rating is package limited.

5.

Guaranteed by design, not subject to production testing

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250uA

20

-

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.4

0.66

1.2

V

Drain-Source On-State Resistance

RDS(on)

VGS=4.5V, ID=4.1A

-

41

56

m

Ω

VGS=2.5V, ID=2.8A

-

50

68

VGS=1.8V, ID=1.5A

-

66

95

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=+12V, VDS=0V

-

-

+100

nA

Dynamic(Note 5)

Total Gate Charge

Qg

VDS=10V, ID=4.1A,

VGS=4.5V(Note 1,2)

-

4.6

-

nC

Gate-Source Charge

Qgs

-

0.8

-

Gate-Drain Charge

Qgd

-

1

-

Input Capacitance

Ciss

VDS=10V, VGS=0V,

f=1.0MHZ

-

350

-

pF

Output Capacitance

Coss

-

40

-

Reverse Transfer Capacitance

Crss

-

29

-

Turn-On Delay Time

td(on)

VDD=10V, ID=4.1A,

VGS=4.5V,

RG=6

Ω(Note 1,2)

-

4

-

ns

Turn-On Rise Time

tr

-

47

-

Turn-Off Delay Time

td(off)

-

18

-

Turn-Off Fall Time

tf

-

10

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

IS

---

-

-

1.5

A

Diode Forward Voltage

VSD

IS=1.0A, VGS=0V

-

0.75

1.2

V