2SA1615 datasheet(1/3 Pages) ISC

部品番号	2SA1615

部品情報	Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1615

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -30V(Min)

·

DC Current Gain-

: hFE= 200(Min)@ IC= -0.5A

·

Ultrahigh-speed switching

APPLICATIONS

The 2SA1615 is available for the large current control

in small dimension due to the low saturation and is ideal

for high efficiency DC/AC converters due to the fast switching

speed

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

PC

Collector Power Dissipation

@ TC=25℃

15

W

Collector Power Dissipation

@Ta=25℃

1.0

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2

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