Silicon NPN Power Transistor

KTC1804D

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA; IB= 0

50

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC=10uA, IE=0

60

--

V

V(BR)EBO

Emitter-base Breakdown Voltage

IE=10uA, IC=0

6

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.2A

--

0.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.2A

--

1.3

V

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

--

1

uA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

--

1

uA

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 2V

100

400

hFE-2

DC Current Gain

IC= 6A ; VCE= 2V

35

--



hFE1 Classifications

O

Y

GR

100-200 140-280 200-400

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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