Silicon NPN Power Transistor

2SD1221

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation

Voltage

IC= 3A; IB= 0.3A

--

--

1.0

V

V(BR)CEO

Collector-Emitter Breakdown

Voltage

IC= 50mA; IB= 0

60

--

--

V

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

--

--

100

uA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

--

--

100

uA

hFE1

DC Current Gain

IC= 0.5A; VCE= 5V

60

--

300

hFE2

DC Current Gain

IC= 3A; VCE= 5V

20

Classification of hFE1

RANK

O

Y

G

hFE

60-120

100-200

150-300

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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