2SD1221-252 datasheet(1/2 Pages) ISC

部品番号	2SD1221-252

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SD1221

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min)

·

DC Current Gain-

: hFE= 60(Min)@ IC= 0.5A

APPLICATIONS

·

DC-DC converter,relay drivers,lamp drivers,motor

drivers, inverter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

3

A

IB

Base current

0.5

A

PC

Collector Power Dissipation

1

W

Collector Power Dissipation

@TC= 25℃

20

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SD1221-252

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	2SD1221-251	295Kb / 2P	Silicon NPN Power Transistor

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