1997 Feb 18

2

Philips Semiconductors

Product specification

NPN microwave power transistor

PLB16012U

FEATURES

• Input matching cell allows an easier

design of circuits

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

stable characteristics and excellent

lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance.

APPLICATIONS

Common base, class C, power

amplifiers at 1.6 GHz. Also suitable

for operation in the 1.4 to 1.8 GHz

range.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT437A glued cap metal ceramic

flange package with base connected

to flange.

QUICK REFERENCE DATA

narrowband amplifier.

MODE OF

OPERATION

f

(GHz)

(V)

(W)

(dB)

(%)

(

Ω)

Class C (CW)

1.6

28

10

>8

>45

see Figs 5

and 6

PINNING - SOT437A

PIN

DESCRIPTION

1

collector

2

emitter

3

base connected to flange

Fig.1 Simplified outline and symbol.

handbook, 4 columns

1

2

3

Top view

e

c

b

MAM112

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.