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MASWSS0091 データシート(PDF) 2 Page - Tyco Electronics |
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MASWSS0091 データシート(HTML) 2 Page - Tyco Electronics |
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2 / 4 page ![]() GaAs SP6T 2.5 V High Power Switch Dual / Tri / Quad-Band GSM Applications MASWSS0091 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. V6 2 Electrical Specifications: TA = 25°C, Vc = 0V/2.5V, Z0 = 50 Ohms 2 Parameter Test Conditions Units Min. Typ. Max. Tx Insertion Loss3 0.5 - 1 GHz 1 - 2 GHz dB dB — — 0.5 0.65 0.7 0.9 Rx Insertion Loss3 0.5 - 1 GHz 1 - 2 GHz dB dB — — 1.0 1.3 1.2 1.6 Tx to Rx Isolation 0.5 - 1 GHz 1 - 2 GHz dB dB 40 — 45 38 — — Tx to Tx Isolation 0.5 - 1 GHz 1 - 2 GHz dB dB 22 — 26 17 — — Return Loss 0.5 - 2.5 GHz dB — 20 — Tx P0.1dB 1 GHz dBm — 41 — Rx P1dB 1 GHz dBm — 25 — 2nd Harmonic 1 GHz, PIN = +35 dBm, 100% Duty Cycle dBc — -78 -67 3rd Harmonic 1 GHz, PIN = +35 dBm, 100% Duty Cycle dBc — -72 -67 Trise, Tfall 10% to 90% RF, 90% to 10% RF µS — 0.2 — Ton, Toff 50% control to 90% RF, and 50% control to 10% RF µS — 0.2 — Transients In Band mV — 70 — Control Current — µA — 20 80 2. External DC blocking capacitors are required on all RF ports. 3. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 100 pF for 0.5 GHz - 2.0 GHz. Qualification Qualified to M/A-COM specification REL-201, Process Flow –2. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Functional Schematic Tx1 Tx2 VTx1 VTx2 ANT VRxC VRx1 Rx1 VRx2 Rx2 Rx3 Rx4 VRx3 VRx4 100pF 100pF 100pF 100pF 100pF 100pF 100pF GND GND |
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