BUX86P datasheet(1/2 Pages) ISC

部品番号	BUX86P

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUX86P

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V (Min)

·

DC Current Gain-

: hFE= 26(Min)@ IC= 50mA

APPLICATIONS

·

Converters

·

Switching Regulators

·

Motor Control Systems

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base Voltage

800

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current- Continuous

0.5

A

ICM

Collector Current-Peak

1

A

PC

Collector Power Dissipation

@ TC=25℃

42

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-40~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3

℃

/W

同様の部品番号 - BUX86P

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BUX86P	50Kb / 6P	Silicon Diffused Power Transistor November 1995 Rev 1.100

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