PMST4403 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

PNP switching transistor

PMST4403

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −40 V

−−50

IE = 0; VCB = −40 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

VCE = −1 V; (see Fig.2)

−−

IC = −0.1 mA

−

IC = −1mA

−

IC = −10 mA

100

−

DC current gain

IC = −150 mA; VCE = −2 V; note 1

100

300

IC = −500 mA; VCE = −2 V; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = −150 mA; IB = −15 mA; note 1

−−400

IC = −500 mA; IB = −50 mA; note 1

−−750

VBEsat

base-emitter saturation voltage

IC = −150 mA: IB = −15 mA; note 1

+750

−950

IC = −500 mA; IB = −50 mA; note 1

−−1.3

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

8.5

emitter capacitance

IC =ic = 0; VEB = −500 mV; f = 1 MHz

−

transition frequency

IC = −20 mA; VCE = −10 V; f = 100 MHz 200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.3)

ton

turn-on time

ICon = −150 mA; IBon = −15 mA;

IBoff =15mA

−

delay time

−

rise time

−

toff

turn-off time

−

350

storage time

−

300

fall time

−

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