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CSD04060E データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 CSD04060E
部品情報  Silicon Carbide Schottky Diode
PDF  3 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

CSD04060E データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  CSD04060E Datasheet HTML 1Page - Inchange Semiconductor Company Limited CSD04060E Datasheet HTML 2Page - Inchange Semiconductor Company Limited CSD04060E Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCD7014
eq CSD04060E
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
·
High-Frequency Operation
·
Extremely Fast Switching
APPLICATIONS
·
Switch Mode Power Supplies
·
Power Factor Correction
·
Motor Drives
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRSM
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
600
V
IF(AVG)
Average Forward Current
Tc=150°C
4
A
Tc=125°C
7
IFSM
Non-Repetitive Forward Surge Current
Tc=25°C,tP=1.5 ms, Half Sine Wave
38
A
Tc=25°C, tP=10 µs, Pulse
110
IFRM
Repetitive Peak Forward Surge
Current
Tc=25°C,Tp=10ms,Half Sine Pulse
17.5
A
Tc=125°C,Tp=10ms,Half Sine Pulse
12.5
Ptot
Power Dissipation
Tc=25°C
62.5
W
Tc=125°C
20.8
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.4
℃
/W
1
3
2


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