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APT5014SFLL データシート(PDF) 2 Page - Advanced Power Technology

部品番号 APT5014SFLL
部品情報  POWER MOS 7 FREDFET
PDF  5 Pages
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メーカー  ADPOW [Advanced Power Technology]
ホームページ  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5014SFLL データシート(HTML) 2 Page - Advanced Power Technology

  APT5014SFLL Datasheet HTML 1Page - Advanced Power Technology APT5014SFLL Datasheet HTML 2Page - Advanced Power Technology APT5014SFLL Datasheet HTML 3Page - Advanced Power Technology APT5014SFLL Datasheet HTML 4Page - Advanced Power Technology APT5014SFLL Datasheet HTML 5Page - Advanced Power Technology  
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DYNAMIC CHARACTERISTICS
APT5014BFLL_SFLL
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S -35A
di/dt ≤ 700A/µs V
R ≤ 500V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -35A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -35A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -35A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -35A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN
TYP
MAX
35
140
1.3
15
Tj = 25°C
250
Tj = 125°C
525
Tj = 25°C
1.6
Tj = 125°C
6.0
Tj = 25°C
13
Tj = 125°C
21
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 550V
I
D = 35A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 550V
I
D = 35A @ 25°C
R
G = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 35A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V VGS = 15V
I
D = 35A, RG = 5Ω
MIN
TYP
MAX
3261
704
50
72
20
36
11
6
23
3
325
249
545
288
UNIT
pF
nC
ns
µJ
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05



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