BUF653 datasheet(1/2 Pages) ISC

部品番号	BUF653

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUF653

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 400V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat) :0.3V(Max) @IC=1.8A

APPLICATIONS

· Electronic lamp ballast circuits

· Switch-mode power supplies

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current

11

A

ICM

Collector Peak Current

16.5

A

PC

Total Power Dissipation

@ TC=25℃

70

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.78

℃

/W

3

2

1

TO-220C Package

Pin 1 Base

2 Collector

3 Emitter

同様の部品番号 - BUF653

メーカー	部品番号	データシート	部品情報
TEMIC Semiconductors	BUF653	132Kb / 8P	Silicon NPN High Voltage Switching Transistor

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