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SA631 データシート(PDF) 2 Page - NXP Semiconductors

部品番号 SA631
部品情報  1GHz low voltage LNA and mixer
PDF  16 Pages
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メーカー  PHILIPS [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA631 データシート(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
SA631
1GHz low voltage LNA and mixer
2
1998 Jan 08
853–2045 18847
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than
±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20
µA.
FEATURES
Low current consumption
Outstanding gain and noise figure
Excellent gain stability versus temperature and supply voltage
LNA and mixer power down capability
Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
900MHz cellular and cordless front-end
Spread spectrum receivers
RF data links
UHF frequency conversion
Portable radio
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
20
19
18
17
16
15
GND
LNA OUT
VCC
LNA IN
GND
GND
MIXER IN
MIXER OUT
MIXER OUT
GND
GND
GND
GND
GND
GND
GND
LO OUT
PD2
PD1
GND
SR00124
Figure 1. Pin Configuration
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
–40 to +85
°C
SA631DK
SOT266-1
BLOCK DIAGRAM
4
3
2
15
20
19
18
17
16
7
610
9
8
15
14
13
12
11
LO
GND
GND
GND
VCC
LNA
IN
GND
MIXER
IN
MIXER
OUT
MIXER
OUT
PD1
PD2
GND
LNA
OUT
GND
OUT
GND
GND
LNA
GND
GND
GND
SR01588
Figure 2. SA631 Block Diagram



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