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SA631 データシート(PDF) 2 Page - NXP Semiconductors |
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SA631 データシート(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page ![]() Philips Semiconductors Product specification SA631 1GHz low voltage LNA and mixer 2 1998 Jan 08 853–2045 18847 DESCRIPTION The SA631 is a combined low-noise BiCMOS amplifier, and mixer designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over –40 to +85°C temperature range. The wide-dynamic-range mixer has a 10dB noise figure and IP3 of +3.3dBm at the input at 881MHz. The nominal current drawn from a single 3V supply is 8.3mA. Additionally, the entire circuit can be powered down to further reduce the supply current to less than 20 µA. FEATURES • Low current consumption • Outstanding gain and noise figure • Excellent gain stability versus temperature and supply voltage • LNA and mixer power down capability • Designed in Philips state of the art BiCMOS QUBIC process APPLICATIONS • 900MHz cellular and cordless front-end • Spread spectrum receivers • RF data links • UHF frequency conversion • Portable radio PIN CONFIGURATION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 19 18 17 16 15 GND LNA OUT VCC LNA IN GND GND MIXER IN MIXER OUT MIXER OUT GND GND GND GND GND GND GND LO OUT PD2 PD1 GND SR00124 Figure 1. Pin Configuration ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 20-Pin Shrink Small Outline Package (Surface-mount, SSOP) –40 to +85 °C SA631DK SOT266-1 BLOCK DIAGRAM 4 3 2 15 20 19 18 17 16 7 610 9 8 15 14 13 12 11 LO GND GND GND VCC LNA IN GND MIXER IN MIXER OUT MIXER OUT PD1 PD2 GND LNA OUT GND OUT GND GND LNA GND GND GND SR01588 Figure 2. SA631 Block Diagram |
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