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SA910 データシート(PDF) 2 Page - NXP Semiconductors |
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SA910 データシート(HTML) 2 Page - NXP Semiconductors |
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2 / 13 page ![]() Philips Semiconductors Product specification SA910 Variable gain RF predriver amplifier 2 1997 Aug 12 853–2021 18269 DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10 µA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process. FEATURES • MMIC BiCMOS predriver amplifier • Low voltage 2.7 to 5.5V single supply operation • 820 to 905MHz bandwidth • High power gain >20dB • High power output >23dBm (typical) @ 3V • Efficiency = 35% (typical) • Wide gain control range: >32dB • Few external components required • Integrated power detector and comparison gain control circuitry • 50Ω input, open-collector output • SSOP-20 package • Integrated regulator with offset adjustment for biasing an external output stage PIN CONFIGURATION VCC1 VREF RFIN GND BIASOUT GND GND GND OUTLPF PWRUP OFFSET GND GND GND VC GND SR01067 1 2 3 4 5 6 7 8 9 10 11 12 13 14 20 19 18 17 16 15 VCC BIAS RFOUT2 RFOUT1 PSENSE APPLICATIONS • 900MHz analog cellular • Handheld transmitting equipment in the 820 to 905MHz frequency range • Cordless phone |
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