2-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
VCC1
GND1
RF IN
GND2
RF OUT
RF OUT
RF OUT
RF OUT
RF5110
3V GSM POWER AMPLIFIER
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF5110 is a high-power, high-efficiency power ampli-
fier module offering high performance in GSM OR GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand-held digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50
Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF5110 can be used
together with the RF5111 for dual-band operation. The
device is packaged in an ultra-small 3mmx3mmx1mm
plastic package, minimizing the required board space.
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 57% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
RF5110
3V GSM Power Amplifier
RF5110 PCBA
Fully Assembled Evaluation Board
0
Rev A0 050318
1.50 TYP
2 PLCS
0.15 CB
-B-
1.37 TYP
2 PLCS
0.15 CB
2 PLCS
0.15 CA
-A-
3.00 SQ.
2.75 SQ.
2 PLCS
0.15 CA
1.00
0.85
0.05
0.01
0.80
0.65
0.05 C
12°
MAX
-C-
SEATING
PLANE
Shaded lead is pin 1.
Dimensions in mm.
CA B
0.10 M
0.30
0.18
0.60
0.24
TYP
0.50
0.55
0.30
1.65
1.35
SQ.
0.23
0.13
4 PLCS
0.45
0.00
4 PLCS
Package Style: QFN, 16-Pin, 3x3
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