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SST25VF512 データシート(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST25VF512 データシート(HTML) 10 Page - Silicon Storage Technology, Inc |
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10 / 23 page  10 Data Sheet 512 Kbit SPI Serial Flash SST25VF512 ©2005 Silicon Storage Technology, Inc. S71192-08-000 11/05 Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the any command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, followed by address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most Significant address) are used to determine the sector address (SAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is exe- cuted. The user may poll the Busy bit in the software status register or wait TSE for the completion of the internal self- timed Sector-Erase cycle. See Figure 7 for the Sector- Erase sequence. FIGURE 7: SECTOR-ERASE SEQUENCE Block-Erase The Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A23-A0]. Address bits [AMS-A15] (AMS = Most significant address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed Block- Erase cycle. See Figure 8 for the Block-Erase sequence. FIGURE 8: BLOCK-ERASE SEQUENCE CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. 20 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1192 F06.12 MSB MSB CE# SO SI SCK ADD. 01 2 3 4 5 6 7 8 ADD. ADD. 52 HIGH IMPEDANCE 15 16 23 24 31 MODE 0 MODE 3 1192 F28.11 MSB MSB |
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