temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

DYNAMIC CHARACTERISTICS

APT10040 B2VR - LVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= 0.5 I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6

Ω

MIN

TYP

MAX

7830

9400

715

1010

386

580

415

630

37

45

216

330

13

26

13

26

57

86

920

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

25

100

1.3

1060

25.5

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.20

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

(Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

050-5909

revA

8-2000

1.0

10

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.2

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01