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APT6010JFLL データシート(PDF) 4 Page - Microsemi Corporation

部品番号 APT6010JFLL
部品情報  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
PDF  5 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6010JFLL データシート(HTML) 4 Page - Microsemi Corporation

  APT6010JFLL Datasheet HTML 1Page - Microsemi Corporation APT6010JFLL Datasheet HTML 2Page - Microsemi Corporation APT6010JFLL Datasheet HTML 3Page - Microsemi Corporation APT6010JFLL Datasheet HTML 4Page - Microsemi Corporation APT6010JFLL Datasheet HTML 5Page - Microsemi Corporation  
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APT6010JFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
1
10
100
600
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100µS
Crss
Ciss
Coss
VDS=300V
VDS=120V
VDS=480V
I
D = 47A
TJ =+150°C
TJ =+25°C
190
100
10
1
16
12
8
4
0
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
5
10 15 20 25 30
35 40 45 50
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
V
DD = 400V
I
D = 47A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
140
120
100
80
60
40
20
0
4000
3000
2000
1000
0
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0



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