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APTM10AM02FG データシート(PDF) 6 Page - Microsemi Corporation |
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APTM10AM02FG データシート(HTML) 6 Page - Microsemi Corporation |
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6 / 6 page ![]() APTM10AM02FG www.microsemi.com 6 - 6 Delay Times vs Current td(on) td(off) 0 100 200 300 400 500 600 50 150 250 350 450 550 650 ID, Drain Current (A) VDS=66V RG=1.25Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 50 100 150 200 250 300 50 150 250 350 450 550 650 ID, Drain Current (A) VDS=66V RG=1.25Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff Eoff 0 1 2 3 4 5 50 150 250 350 450 550 650 ID, Drain Current (A) VDS=66V RG=1.25Ω TJ=125°C L=100µH Eon Eoff 1 2 3 4 5 6 7 8 9 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=66V ID=400A TJ=125°C L=100µH Hard switching ZVS ZCS 0 10 20 30 40 50 60 100 200 300 400 500 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=1.25Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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