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APTM10DAM02G データシート(PDF) 2 Page - Microsemi Corporation

部品番号 APTM10DAM02G
部品情報  Boost chopper MOSFET Power Module
PDF  6 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM10DAM02G データシート(HTML) 2 Page - Microsemi Corporation

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APTM10DAM02G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
400
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
2000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 200A
2.25
2.5
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
40
Coss
Output Capacitance
15.7
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
5.9
nF
Qg
Total gate Charge
1360
Qgs
Gate – Source Charge
240
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 400A
720
nC
Td(on)
Turn-on Delay Time
160
Tr
Rise Time
240
Td(off)
Turn-off Delay Time
500
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 400A
RG = 1.25Ω
160
ns
Eon
Turn-on Switching Energy
2.2
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 400A, RG =1.25Ω
2.41
mJ
Eon
Turn-on Switching Energy
2.43
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 400A, RG = 1.25Ω
2.56
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 80°C
400
A
IF = 400A
1
IF = 800A
1.4
VF
Diode Forward Voltage
IF = 400A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
Tj = 125°C
110
ns
Tj = 25°C
800
Qrr
Reverse Recovery Charge
IF = 400A
VR = 133V
di/dt =800A/µs
Tj = 125°C
3360
nC



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