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MRF557 データシート(PDF) 1 Page - Advanced Power Technology |
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MRF557 データシート(HTML) 1 Page - Advanced Power Technology |
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1 / 5 page ![]() MRF557 MRF557G Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 * G Denotes RoHS Compliant, Pb Free Terminal Finish DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 16 Vdc VCBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 500 mA Thermal Data P D Total Device Dissipation @ TC = 75 °C Derate above 75 °C 3.0 40 Watts mW/ °C Power Macro Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
同様の部品番号 - MRF557 |
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同様の説明 - MRF557 |
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