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MS2201 データシート(PDF) 1 Page - Advanced Power Technology |
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MS2201 データシート(HTML) 1 Page - Advanced Power Technology |
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1 / 5 page ![]() MS2201 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: DESCRIPTION: The MS2201 is a silicon NPN, Class C microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. AABSOLUTE MAXIMUM RATINGS BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit PDISS Power Dissipation 10 W VCC Collector-Supply Voltage 37 V TJ Junction Temperature 200 º C IC Device Current 250 mA TSTG Storage Temperature -65 to +200 º C Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance* 10 °°C/W Features Features • 1025-1150 MHz • GOLD METALLIZATION • INFINITE VSWR CAPABILITY @ RATED CONDITIONS • Pout = 2 W MINIMUM • G P= 9 dB RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
同様の部品番号 - MS2201 |
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同様の説明 - MS2201 |
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