2N65-TC

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

2 of 7

www.unisonic.com.tw

QW-R205-435.B



ABSOLUTE MAXIMUM RATINGS (T

C = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

± 30

V

Drain Current

Continuous

ID

2

A

Pulsed (Note 2)

IDM

4

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

101

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.8

V/ns

Power Dissipation

PD

44

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 30mH, IAS = 2.6A, VDD = 90V, RG = 25 Ω Starting TJ = 25°C

4. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

110

°C/W

Junction to Case

θJC

2.87

°C/W



ELECTRICAL CHARACTERISTICS (T

J = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID= 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS=650V, VGS=0V

10

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=30V, VDS=0V

100

nA

Reverse

VGS=-30V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.0A

4.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0 MHz

301

pF

Output Capacitance

COSS

38

pF

Reverse Transfer Capacitance

CRSS

2.5

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=520V, VGS=10V, ID=2A

IG=1mA (Note 1, 2)

7.5

nC

Gateource Charge

QGS

3

nC

Gate-Drain Charge

QGD

1

nC

Turn-on Delay Time (Note 1)

tD(ON)

VDS=100V, VGS=10V, ID=2A,

RG=25Ω (Note 1, 2)

6

ns

Rise Time

tR

16

ns

Turn-off Delay Time

tD(OFF)

22

ns

Fall-Time

tF

24

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

2

A

Maximum Body-Diode Pulsed Current

ISM

4

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

VGS=0V, IS=2.0A

1.4

V

Reverse Recovery Time (Note 1)

trr

VGS=0V, IS=2.0A,

dIF/dt=100A/µs (Note1)

205

ns

Reverse Recovery Charge

Qrr

2.3

µC

Notes: 1.

Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.