Electrical Characteristics (TA=25 unless otherwise noted)

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

20

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

2.0

V

VGS=4.5V, ID=6A

-

6

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=2.5V, ID=5A

8

Forward Transconductance

gFS

VDS=10V,ID=6A

20

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

-

2000

-

PF

Output Capacitance

Coss

-

402

-

PF

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

-

170

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

-

25

-

nS

Turn-on Rise Time

tr

-

15

-

nS

Turn-Off Delay Time

td(off)

-

25

-

nS

Turn-Off Fall Time

tf

VDD=10V,ID=6A

VGS=4. 5V,RGEN=1Ω

-

15

-

nS

Total Gate Charge

Qg

-

42

-

nC

Gate-Source Charge

Qgs

-

10.8

-

nC

Gate-Drain Charge

Qgd

VDS=10V,ID=6A,

VGS=10V

-

9.2

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=6A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

12

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

mΩ

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DMN2009LSS-13

v2.0