3DF1E datasheet(1/2 Pages) ISC

部品番号	3DF1E

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

3DF1E

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO=200V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):1.5V(Max) @IC=0.25A

APPLICATIONS

· Low current high speed switching applications

· Low power audio amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current-Continuous

1

A

PD

Collector Power Dissipation TC=25℃

10

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

15

℃

/W

同様の部品番号 - 3DF1E

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	3DF1A	205Kb / 2P	isc Silicon NPN Power Transistor
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