Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-60

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-60V,VGS=0V

-

-

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.0

-2.0

V

VGS=-10V, ID=-8A

-

55

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-8A

-

65

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-8A

-

15

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

1108

-

PF

Output Capacitance

Coss

-

73.7

-

PF

Reverse Transfer Capacitance

Crss

VDS=-30V,VGS=0V,

F=1.0MHz

-

58.2

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

8

-

nS

Turn-on Rise Time

tr

-

4

-

nS

Turn-Off Delay Time

td(off)

-

32

-

nS

Turn-Off Fall Time

tf

VDD=-30V, RL=3.75Ω，

VGS=-10V,RG=3Ω

-

7

-

nS

Total Gate Charge

Qg

-

23.4

-

nC

Gate-Source Charge

Qgs

-

4.1

-

nC

Gate-Drain Charge

Qgd

VDS=-30,ID=-8A,

VGS=-10V

-

4.8

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-16A

-

-1.2

V

Diode Forward Current

(Note 2)

IS

-

-

-16

A

Reverse Recovery Time

trr

-

25

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =- 8A

di/dt = -100A/μs

(Note3)

-

31

nC

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

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SPD09P06PLG

v2.0