Symbol

Min.

Typ.

Max.

Unit

V(BR)DSS

40

V

VDS = 32V, VGS = 0V

1.0

TJ = 55°C

5.0

IGSS

±100

nA

Gate Threshold Voltage

VGS(th)

1.2

2.5

V

2.0

m

3.0

m

gFS

171

S

VSD

0.69

1.0

V

IS

125

A

Ciss

3133

pF

Coss

1993

pF

Crss

75

pF

Rg

2.8



Qg

46

nC

Qg

23

nC

Qgs

6.2

nC

Qgd

6.5

nC

tD(on)

6.7

ns

tr

20

ns

tD(off)

72

ns

tf

52

ns

trr

50

ns

Qrr

29

nC

Symbol

Unit

RJA

°C/W

RJC

°C/W

Notes:

A

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

Body Diode Reverse Recovery Time

IF = 15A, dIF/dt = 100A/s

Zero Gate Voltage Drain Current

IDSS

VDS = VGS, ID = 250A

Diode Continuous Current

VGS = 10V, ID = 20A

Forward Transconductance

VDS = 5V, ID = 20A

Input Capacitance

VGS = 0V, VDS = 20V, f = 1MHz

Static Drain-Source ON-Resistance

RDS(ON)

Body Diode Reverse Recovery Charge

Turn-Off Fall Time

45

1.0

IF = 15A, dIF/dt = 100A/s

Parameter

Thermal Resistance, Junction-to-Case

Typ.

Thermal Performance

Max.

38

0.8

Parameter

Conditions

Drain-Source Breakdown Voltage

ID = 250A, VGS = 0V

STATIC PARAMETERS

Electrical Characteristics (@ TJ = 25°C unless otherwise specified)

Diode Forward Voltage

IS = 1A, VGS = 0V

Output Capacitance

Reverse Transfer Capacitance

DYNAMIC PARAMETERS

(5)

TC = 25°C

SWITCHING PARAMETERS

(5)

VGS = 4.5V, ID = 15A

application board design.

Gate Resistance

VGS = 0V, VDS= 0V, f = 1MHz

Total Gate Charge (@ VGS = 10V)

VGS = 0 to 10V

VDS = 20V, ID = 20A

Total Gate Charge (@ VGS = 4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS = 10V, VDS = 20V

RL = 1, RGEN = 6

Turn-On Rise Time

Turn-Off DelayTime

1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical

Thermal Resistance, Junction-to-Ambient

2. This single-pulse measurement was taken under TJ_Max = 150°C.

3. This single-pulse measurement was taken under the following condition [L = 300H, VGS = 10V, VDS = 20V] while its value is limited by

4. The power dissipation PD is based on TJ_Max = 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

TJ_Max = 150°C.

v2.0

www.bychip.cn

UT60N03L-TN3-R

v2.0