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2SA778 データシート(PDF) 2 Page - Renesas Technology Corp

部品番号 2SA778
部品情報  Silicon PNP Epitaxial
PDF  7 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA778 データシート(HTML) 2 Page - Renesas Technology Corp

  2SA778 Datasheet HTML 1Page - Renesas Technology Corp 2SA778 Datasheet HTML 2Page - Renesas Technology Corp 2SA778 Datasheet HTML 3Page - Renesas Technology Corp 2SA778 Datasheet HTML 4Page - Renesas Technology Corp 2SA778 Datasheet HTML 5Page - Renesas Technology Corp 2SA778 Datasheet HTML 6Page - Renesas Technology Corp 2SA778 Datasheet HTML 7Page - Renesas Technology Corp  
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2SA778(K), 2SA778A(K)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 2 of 7
Electrical Characteristics
(Ta = 25°C)
2SA778(K)
2SA778A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–150
–180
V
IC = –50
µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CER
–150
–180
V
IC = –50
µA,
RBE = 30 k
Collector cutoff current
ICBO
–1.0
µA
VCB = –100 V, IE = 0
–1.0
µA
VCB = –150 V, IE = 0
Emitter cutoff current
IEBO
–1.0
–1.0
µA
VEB = –5 V, IC = 0
DC current transfer ratio
hFE
30
100
40
100
200
VCE = –3 V,
IE = –15 mA
Collector to emitter
saturation voltage
VCE(sat)
–0.3
–1.0
–0.3
–1.0
V
IC = –15 mA,
IB = –1 mA
Base to emitter saturation
voltage
VBE(sat)
–0.77
–1.0
–0.77
–1.0
V
IC = –15 mA,
IB = –1 mA
Collector output
capacitance
Cob
10
10
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT
50
50
MHz
VCE = –3 V,
IC = –15 mA
Turn on time
ton
135
135
ns
VCC = –10.3 V
Turn off time
toff
1.7
1.7
µs
IC = 10 IB1 = –10
IB2 = –10 mA
Storage time
tstg
1.0
1.0
µs
VCC = –10 V,
IC =–17 mA
IB1 = –1mA,
IB2 = –12 mA



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