GSMBT4076 datasheet(1/2 Pages) GTM

部品番号	GSMBT4076

部品情報	NPN EPITAXIAL PLANAR TRANSISTOR

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メーカー	GTM [GTM CORPORATION]

ホームページ	http://www.gtm.com.tw

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ISSUED DATE :2005/07/22

REVISED DATE :

G

G S

S M

M B

B T

T 44007766

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT4076 is designed for general purpose switching and amplifier applications.

Features

&Excellent hFE Linearity : hFE2=25 (Min.) @VCE=6v, IC=400mA

&Complementary to GSMBT2015

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

35

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Base Current

IB

50

mA

Total Power Dissipation

PD

250

mW

Electrical Characteristics (Ta = 25 )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

35

-

V

IC=100uA , IE=0

BVCEO

30

-

V

IC=1mA, IB=0

BVEBO

5

-

V

IE=10uA ,IC=0

ICBO

-

100

nA

VCB=35V, IE=0

IEBO

-

100

nA

VEB=5V, IC=0

*VCE(sat)

-

250

mV

IC=100mA, IB=10mA

*VBE(sat)

-

1.2

V

IC=500mA, IB=50mA

*hFE1

70

-

240

VCE=1V, IC=100mA

*hFE2

25

-

VCE=6V, IC=400mA

fT

250

-

MHz

VCE=10V, IC=20mA, f=100MHz

Cob

-

6.5

pF

VCB=10V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE

Rank

WO

WY

hFE1 Range

70 - 140

120 - 240

hFE2 Range

Min. 25

Min. 40

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