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ADL8122ACPZN-R7 データシート(PDF) 23 Page - Analog Devices

部品番号 ADL8122ACPZN-R7
部品情報  10 kHz to 10 GHz, Wideband, Low Noise Amplifier
PDF  28 Pages
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
Logo AD - Analog Devices

ADL8122ACPZN-R7 データシート(HTML) 23 Page - Analog Devices

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Data Sheet
ADL8122
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 23 of 28
The basic connections for operating the ADL8122 from 10 MHz to
10 GHz are shown in Figure 94. AC-couple the input and output
of the ADL8122 with appropriately sized capacitors (such as Ameri-
can Technical Ceramics Part Number 560L104YTRN). Connect a
ferrite bead between the VBIAS pin and the RFIN pin to provide
a DC bias voltage to the RF input. A 5 V DC bias is provided
to the amplifier using two ferrite beads connected to the RFOUT/
VDD1 pin. The recommended bias inductor is a TDK Corporation
MMZ1005A222ET000 2.2 kΩ at 100 MHz.
Figure 92. Gain and Return Loss vs. Frequency of 10 MHz to 12 GHz
Application Circuit, 10 kHz to 200 MHz,
VDD = 5 V, IDQ = 95 mA, RBIAS = 620 Ω
The 5 V DC bias voltage must also be connected to the VDD2
pin. The bias conditions, VDD = 5 V and IDQ = 95 mA, are the
recommended operating point to achieve specified performance.
The gain and return loss of this circuit are shown in Figure 92 and
Figure 93 across frequencies. To set other bias conditions, adjust
the RBIAS value. Table 9 shows the recommended RBIAS values and
their associated IDQ values.
Figure 93. Gain and Return Loss vs. Frequency of 10 MHz to 12 GHz
Application Circuit, 200 MHz to 12 GHz,
VDD = 5 V, IDQ = 95 mA, RBIAS = 620 Ω
Figure 94. Typical Application Circuit for Operation from 10 MHz to 10 GHz



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