AP730P datasheet(2/6 Pages) A-POWER

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Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

400

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

0.36

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=2.75A

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=2.75A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=400V, VGS=0V

Drain-Source Leakage Current (Tj=150

oC)

VDS=320V, VGS=0V

100

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=5.5A

Qgs

Gate-Source Charge

VDS=320V

3.7

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

td(on)

Turn-on Delay Time

VDD=200V

Rise Time

ID=5.5A

td(off)

Turn-off Delay Time

RG=10Ω,VGS=10V

Fall Time

RD=36Ω

-18

Ciss

Input Capacitance

VGS=0V

565

Coss

Output Capacitance

VDS=25V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.5V

5.5

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25℃, IS=5.5A, VGS=0V

1.5

Notes:

1.Pulse width limited by safe operating area.

2.Starting Tj=25

oC , V

DD=50V , L=15mH , RG=25Ω , IAS=5.5A.

3.Pulse width <300us , duty cycle <2%.

AP730P

±100

± 30V

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