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P4C1258 データシート(PDF) 3 Page - Pyramid Semiconductor Corporation

部品番号 P4C1258
部品情報  ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
PDF  9 Pages
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メーカー  PYRAMID [Pyramid Semiconductor Corporation]
ホームページ  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1258 データシート(HTML) 3 Page - Pyramid Semiconductor Corporation

  P4C1258 Datasheet HTML 1Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 2Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 3Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 4Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 5Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 6Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 7Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 8Page - Pyramid Semiconductor Corporation P4C1258 Datasheet HTML 9Page - Pyramid Semiconductor Corporation  
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P4C1258
Page 3 of 9
Document # SRAM123 REV OR
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL
DATA RETENTION CHARACTERISTICS
Symbol
V
DR
I
CCDR
t
CDR
t
R
†
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditions
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V or
V
IN ≤ 0.2V
Min
2.0
0
t
RC
§
Typ.*
V
CC =
2.0V
3.0V
10
15
Max
V
CC =
2.0V
3.0V
1500
2000
Unit
V
µA
ns
ns
DATA RETENTION WAVEFORM
*T
A = +125°C
§
t
RC = Read Cycle Time
†
This parameter is guaranteed but not tested.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
–15
–20
–25
–35
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
115
120
135
170
160
125
115
110



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