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HTD3 データシート(PDF) 1 Page - Electronic devices inc.

部品番号 HTD3
部品情報  High Temperature High Voltage Rectifier Diodes
PDF  2 Pages
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メーカー  EDI [Electronic devices inc.]
ホームページ  http://www.edidiodes.com
Logo EDI - Electronic devices inc.

HTD3 データシート(HTML) 1 Page - Electronic devices inc.

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HTD 3
Max. DC Reverse Current @ PRV @ 200 C,I
Storage Temperature Range,T
18
typical
50 mA
Ambient Operating Temperature Range
O
O
ELECTRICAL CHARACTERISTICS (at TA
O
EDI TYPE NO.
PEAK REVERSE VOL TAGE
DIMENSIONS
HTD 3
3,000V
See Fig.3
1 mA
0.1
Max. DC Reverse Current @ PRV @ 25 C, I
O
O
O
O
O
O
O
Note1 I at 200 C readings are taken in oil after voltage
R
has been applied to device for 5 minutes.
Exceptional high temperature Stability
up t o 20 0 C
Exceptionally low leakage
Small size
3 KV P RV
U
200 C High Temperature
High Voltage Rectifier Diodes
O
O
R
R (See Note:1)
30
max
See Note 2
-55
to+200
OC
OC
25 V
-55
to+200
OC
OC
A
A
A
EDI reserves the rightto change these specifications at any time without notice.
Our proprietary diffusion and passivation process provides this unusual stability and no leakage drift at these elevated
temperatures. All diodes are subjected to 10 test temperature cycles from -55 C to + 200 C.
O
O
Average Rectified Forward Current, @ 50 C I
Average Rectified Forward Current, @ 200 C I
Max. Forward Voltage Drop at 25 C and 10mA ,VF (Volts)
=25 C Unless Otherwise Specified)
Note 2
All diodes are hot forward swept for forward
stability to maximum temperature of 200 C on
dynamic display on curve trace oscilloscope.
O
Forward Stability Tj 200 C


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