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ST10F269ZX データシート(PDF) 25 Page - STMicroelectronics |
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ST10F269ZX データシート(HTML) 25 Page - STMicroelectronics |
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25 / 184 page ![]() ST10F269 5 - INTERNAL FLASH MEMORY 25/184 Table 3 : Instructions Notes 1. Address bit A14, A15 and above are don’t care for coded address inputs. 2. X = Don’t Care. 3. WA = Write Address: address of memory location to be programmed. 4. WD = Write Data: 16-bit data to be programmed 5. Optional, additional blocks addresses must be entered within a time-out delay (96 µs) after last write entry, time-out status can be verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 6. Read Data Polling or Toggle bit until Erase completes. 7. WPR = Write protection register. To protect code, bit 15 of WPR must be ‘0’. To protect block N (N=0,1,...), bit N of WPR must be ‘0’. Bit that are already at ‘0’ in protection register must also be ‘0’ in WPR, else a writing error will occurs (it is not possible to write a ‘1’ in a bit already programmed at ‘0’). Instruction Mne Cycle 1st Cycle 2nd Cycle 3rd Cycle 4th Cycle 5th Cycle 6th Cycle 7th Cycle Read/Reset RD 1+ Addr.1 X 2 Read Memory Array until a new write cycle is initiated Data xxF0h Read/Reset RD 3+ Addr.1 x1554h x2AA8h xxxxxh Read Memory Array until a new write cycle is initiated Data xxA8h xx54h xxF0h Program Word PW 4 Addr.1 x1554h x2AA8h x1554h WA 3 Read Data Polling or Tog- gle bit until Program com- pletes. Data xxA8h xx54h xxA0h WD 4 Block Erase BE 6 Addr.1 x1554h x2AA8h x1554h x1554h x2AA8h BA BA’ 5 Data xxA8h xx54h xx80h xxA8h xx54h xx30h xx30h Chip Erase CE 6 Addr.1 x1554h x2AA8h x1554h x1554h x2AA8h x1554h Note 6 Data xxA8h xx54h xx80h xxA8h xx54h xx10h Erase Suspend ES 1 Addr.1 X2 Read until Toggle stops, then read or program all data needed from block(s) not being erased then Resume Erase. Data xxB0h Erase Resume ER 1 Addr.1 X2 Read Data Polling or Toggle bit until Erase completes or Erase is suspended another time. Data xx30h Set Block/Code Protection SP 4 Addr.1 x2A54h x15A8h x2A54h Any odd word address 9 Data xxA8h xx54h xxC0h WPR 7 Read Protection Status RP 4 Addr.1 x2A54h x15A8h x2A54h Any odd word address 9 Read Protection Register until a new write cycle is initiated. Data xxA8h xx54h xx90h Read PR Block Temporary Unprotection BTU 4 Addr.1 x2A54h x15A8h x2A54h X2 Data xxA8h xx54h xxC1h xxF0h Code Temporary Unprotection CTU 1 Addr.1 MEM 8 Write cycles must be executed from Flash. Data FFFFh Code Temporary Protection CTP 1 Addr.1 MEM 8 Write cycles must be executed from Flash. Data FFFBh |
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